Electronic effects of ion damage in hydrogenated amorphous silicon alloys

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 4800-4804

  Van Swaaij, R A C M M ^a   Annis, A D ^a   Sealy, B J ^a   Shannon, J M ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BAND TAIL; BARRIER HEIGHTS; DIODE STRUCTURE; DUAL BEAM PHOTOCONDUCTIVITIES; ELECTRICAL BEHAVIORS; ELECTRICAL MEASUREMENT; ELECTRONIC EFFECTS; HYDROGEN CONCENTRATION; HYDROGENATED AMORPHOUS SILICON; HYDROGENATED AMORPHOUS SILICON (A-SI:H); ION DAMAGE; ION DOSE; LOW DOSE; OPTICAL ABSORPTION MEASUREMENT; SILICON RICH;

AMORPHOUS ALLOYS; AMORPHOUS FILMS; CERIUM ALLOYS; ELECTRONIC PROPERTIES; ENERGY GAP; GERMANIUM; HYDROGENATION; ION IMPLANTATION; METAL RECOVERY; OPTICAL BAND GAPS; OPTICAL CORRELATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; SILICON NITRIDE;

AMORPHOUS SILICON;

EID: 0000230470     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366338     Document Type: Article

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