Role of charged defects in current transport through hydrogenated amorphous silicon alloys

Materials Research Society Symposium - Proceedings

Volumn 507, Issue , 1999, Pages 655-660

  Lau, S P ^a   Shannon, J M ^a   Sealy, B J ^a   Marshall, J M ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; CHEMICAL BONDS; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRON ENERGY LEVELS; HYDROGENATION; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SILICON NITRIDE;

DANGLING BONDS; POOLE-FRENKEL CONDUCTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032625459     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)