Programmable devices based on current induced conductivity in amorphous silicon alloys

Solid-State Electronics

Volumn 42, Issue 1, 1998, Pages 91-99

  Shannon, J M ^a   Lau, S P ^a   Annis, A D ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ALLOYS; AMORPHOUS SILICON; ANNEALING; CRYSTAL DEFECTS; INDUCED CURRENTS; SEMICONDUCTOR DEVICE STRUCTURES;

HOLE-ELECTRON RECOMBINATION; METAL-SEMICONDUCTOR-METAL STRUCTURES; PROGRAMMABLE DEVICES;

ELECTRIC CONDUCTIVITY OF SOLIDS;

EID: 0031620445     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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