-
1
-
-
84884220898
-
Functional plasmonic nanocircuits with low insertion and propagation losses
-
A. Kriesch, S. P. Burgos, D. Ploss, H. Pfeifer, H. A. Atwater, and U. Peschel, "Functional plasmonic nanocircuits with low insertion and propagation losses," Nano Lett. 13, 4539-4545 (2013).
-
(2013)
Nano Lett.
, vol.13
, pp. 4539-4545
-
-
Kriesch, A.1
Burgos, S.P.2
Ploss, D.3
Pfeifer, H.4
Atwater, H.A.5
Peschel, U.6
-
2
-
-
34247282775
-
Plasmonic interconnects versus conventional interconnects: A comparison of latency, crosstalk and energy costs
-
J. A. Conway, S. Sahni, and T. Szkopek, "Plasmonic interconnects versus conventional interconnects: a comparison of latency, crosstalk and energy costs," Opt. Express 15, 4474-4484 (2007).
-
(2007)
Opt. Express
, vol.15
, pp. 4474-4484
-
-
Conway, J.A.1
Sahni, S.2
Szkopek, T.3
-
3
-
-
79958760876
-
Experimental demonstration of low-loss optical waveguiding at deep sub-wavelength scales
-
V. J. Sorger, Z. Ye, R. F. Oulton, Y. Wang, G. Bartal, X. Yin, and X. Zhang, "Experimental demonstration of low-loss optical waveguiding at deep sub-wavelength scales," Nat. Commun. 2, 331 (2011).
-
(2011)
Nat. Commun.
, vol.2
, pp. 331
-
-
Sorger, V.J.1
Ye, Z.2
Oulton, R.F.3
Wang, Y.4
Bartal, G.5
Yin, X.6
Zhang, X.7
-
4
-
-
84874961867
-
Confined surface plasmon-polariton amplifiers
-
S. Kena-Cohen, P. N. Stavrinou, D. D. Bradley, and S. A. Maier, "Confined surface plasmon-polariton amplifiers," Nano Lett. 13, 1323-1329 (2013).
-
(2013)
Nano Lett.
, vol.13
, pp. 1323-1329
-
-
Kena-Cohen, S.1
Stavrinou, P.N.2
Bradley, D.D.3
Maier, S.A.4
-
5
-
-
70349656100
-
Plasmon lasers at deep subwavelength scale
-
R. F. Oulton, V. J. Sorger, T. Zentgraf, R.-M. Ma, C. Gladden, L. Dai, G. Bartal, and X. Zhang, "Plasmon lasers at deep subwavelength scale," Nature 461, 629-632 (2009).
-
(2009)
Nature
, vol.461
, pp. 629-632
-
-
Oulton, R.F.1
Sorger, V.J.2
Zentgraf, T.3
Ma, R.-M.4
Gladden, C.5
Dai, L.6
Bartal, G.7
Zhang, X.8
-
6
-
-
79955365988
-
A room-temperature semiconductor spaser operating near 1.5 μm
-
R. Flynn, C. Kim, I. Vurgaftman, M. Kim, J. Meyer, A. Mäkinen, K. Bussmann, L. Cheng, F.-S. Choa, and J. Long, "A room-temperature semiconductor spaser operating near 1.5 μm," Opt. Express 19, 8954-8961 (2011).
-
(2011)
Opt. Express
, vol.19
, pp. 8954-8961
-
-
Flynn, R.1
Kim, C.2
Vurgaftman, I.3
Kim, M.4
Meyer, J.5
Mäkinen, A.6
Bussmann, K.7
Cheng, L.8
Choa, F.-S.9
Long, J.10
-
7
-
-
33847694728
-
Integrated AlGaInAssilicon evanescent race track laser and photodetector
-
A. W. Fang, R. Jones, H. Park, O. Cohen, O. Raday, M. J. Paniccia, and J. E. Bowers, "Integrated AlGaInAssilicon evanescent race track laser and photodetector," Opt. Express 15, 2315-2322 (2007).
-
(2007)
Opt. Express
, vol.15
, pp. 2315-2322
-
-
Fang, A.W.1
Jones, R.2
Park, H.3
Cohen, O.4
Raday, O.5
Paniccia, M.J.6
Bowers, J.E.7
-
8
-
-
78649282019
-
Semiconductor surface plasmon amplifier based on a schottky barrier diode
-
D. Y. Fedyanin and A. V. Arsenin, "Semiconductor surface plasmon amplifier based on a Schottky barrier diode," in AIP Conference Proceedings 1291 (2010), pp. 112-114.
-
(2010)
AIP Conference Proceedings
, vol.1291
, pp. 112-114
-
-
Fedyanin, D.Y.1
Arsenin, A.V.2
-
9
-
-
79959483196
-
Surface plasmon polariton amplification in metal-semiconductor structures
-
D. Y. Fedyanin and A. V. Arsenin, "Surface plasmon polariton amplification in metal-semiconductor structures," Opt. Express 19, 12524-12531 (2011).
-
(2011)
Opt. Express
, vol.19
, pp. 12524-12531
-
-
Fedyanin, D.Y.1
Arsenin, A.V.2
-
10
-
-
84856972730
-
Loss and gain measurements of tensile strained quantum well diode lasers for plasmonic devices at telecom wavelengths
-
D. Costantini, A. Bousseksou, M. Fevrier, B. Dagens, and R. Colombelli, "Loss and gain measurements of tensile strained quantum well diode lasers for plasmonic devices at telecom wavelengths," IEEE J. Quantum Electron. 48, 73-78 (2012).
-
(2012)
IEEE J. Quantum Electron.
, vol.48
, pp. 73-78
-
-
Costantini, D.1
Bousseksou, A.2
Fevrier, M.3
Dagens, B.4
Colombelli, R.5
-
11
-
-
84861063160
-
Surface plasmon polariton amplification upon electrical injection in highly integrated plasmonic circuits
-
D. Y. Fedyanin, A. V. Krasavin, A. V. Arsenin, and A. V. Zayats, "Surface plasmon polariton amplification upon electrical injection in highly integrated plasmonic circuits," Nano Lett. 12, 2459-2463 (2012).
-
(2012)
Nano Lett.
, vol.12
, pp. 2459-2463
-
-
Fedyanin, D.Y.1
Krasavin, A.V.2
Arsenin, A.V.3
Zayats, A.V.4
-
13
-
-
84874230649
-
Polarization of the edge emission from Ag/InGaAsP schottky plasmonic diode
-
C. Wang, H. J. Qu, W. X. Chen, G. Z. Ran, H. Y. Yu, B. Niu, J. Q. Pan, and W. Wang, "Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode," Appl. Phys. Lett. 102, 061112 (2013).
-
(2013)
Appl. Phys. Lett.
, vol.102
, pp. 061112
-
-
Wang, C.1
Qu, H.J.2
Chen, W.X.3
Ran, G.Z.4
Yu, H.Y.5
Niu, B.6
Pan, J.Q.7
Wang, W.8
-
14
-
-
84856668109
-
Toward an electrically pumped spaser
-
D. Y. Fedyanin, "Toward an electrically pumped spaser," Opt. Lett. 37, 404-406 (2012).
-
(2012)
Opt. Lett.
, vol.37
, pp. 404-406
-
-
Fedyanin, D.Y.1
-
15
-
-
67649243471
-
Lasing in metal-insulator-metal sub-wavelength plasmonic waveguides
-
M. T. Hill, M. Marell, E. S. Leong, B. Smalbrugge, Y. Zhu, M. Sun, P. J. van Veldhoven, E. J. Geluk, F. Karouta, Y.-S. Oei et al., "Lasing in metal-insulator-metal sub-wavelength plasmonic waveguides," Opt. Express 17, 11107-11112 (2009).
-
(2009)
Opt. Express
, vol.17
, pp. 11107-11112
-
-
Hill, M.T.1
Marell, M.2
Leong, E.S.3
Smalbrugge, B.4
Zhu, Y.5
Sun, M.6
Van Veldhoven, P.J.7
Geluk, E.J.8
Karouta, F.9
Oei, Y.-S.10
-
16
-
-
84933080702
-
Inherent properties of a tunnel-injection laser
-
G. Wade, C. Wheeler, and R. Hunsperger, "Inherent properties of a tunnel-injection laser," Proc. IEEE 53, 98-99 (1965).
-
(1965)
Proc. IEEE
, vol.53
, pp. 98-99
-
-
Wade, G.1
Wheeler, C.2
Hunsperger, R.3
-
18
-
-
84893961352
-
Electrically pumped hybrid plasmonic waveguide
-
The results obtained in this reference assume free passage of carriers through the insulator layer with the injection velocity equal to the thermal velocity. This contradicts to the established theories of carrier transport in MIS structures [20,21]. Due to the high potential barriers at the metal-insulator and semiconductor-insulator interfaces, the thermionic injection cannot be actually efficient, while the dominating transport mechanism is due to tunneling
-
T. Wijesinghe, M. Premaratne, and G. P. Agrawal, "Electrically pumped hybrid plasmonic waveguide," Opt. Express 22, 2681-2694 (2014). The results obtained in this reference assume free passage of carriers through the insulator layer with the injection velocity equal to the thermal velocity. This contradicts to the established theories of carrier transport in MIS structures [20,21]. Due to the high potential barriers at the metal-insulator and semiconductor-insulator interfaces, the thermionic injection cannot be actually efficient, while the dominating transport mechanism is due to tunneling.
-
(2014)
Opt. Express
, vol.22
, pp. 2681-2694
-
-
Wijesinghe, T.1
Premaratne, M.2
Agrawal, G.P.3
-
19
-
-
0015671884
-
Minority carrier effects upon the small signal and steady-state properties of schottky diodes
-
M. Green and J. Shewchun, "Minority carrier effects upon the small signal and steady-state properties of Schottky diodes," Solid-State Electron. 16, 1141-1150 (1973).
-
(1973)
Solid-State Electron.
, vol.16
, pp. 1141-1150
-
-
Green, M.1
Shewchun, J.2
-
20
-
-
0001537507
-
Volt-current characteristics for tunneling through insulating films
-
R. Stratton, "Volt-current characteristics for tunneling through insulating films," J. Phys. Chem. Solids 23, 1177-1190 (1962).
-
(1962)
J. Phys. Chem. Solids
, vol.23
, pp. 1177-1190
-
-
Stratton, R.1
-
21
-
-
0011715992
-
Studies of tunnel MOS diodes I. Interface effects in silicon schottky diodes
-
H. Card and E. Rhoderick, "Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes," J. Phys. D: Appl. Phys. 4, 1589 (1971).
-
(1971)
J. Phys. D: Appl. Phys.
, vol.4
, pp. 1589
-
-
Card, H.1
Rhoderick, E.2
-
22
-
-
39749137699
-
0.47As: Passivation and energy-band parameters
-
0.47As: Passivation and energy-band parameters," Appl. Phys. Lett. 92, 072901 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 072901
-
-
Chang, Y.C.1
Huang, M.L.2
Lee, K.Y.3
Lee, Y.J.4
Lin, T.D.5
Hong, M.6
Kwo, J.7
Lay, T.S.8
Liao, C.C.9
Cheng, K.Y.10
-
23
-
-
33746281113
-
Band offsets of high k gate oxides on III-V semiconductors
-
J. Robertson and B. Falabretti, "Band offsets of high k gate oxides on III-V semiconductors," J. Appl. Phys. 100, 014111 (2006).
-
(2006)
J. Appl. Phys.
, vol.100
, pp. 014111
-
-
Robertson, J.1
Falabretti, B.2
-
27
-
-
0016562055
-
On the direct currents through interface states in metal-semiconductor contacts
-
H. Card, "On the direct currents through interface states in metal-semiconductor contacts," Solid-State Electron. 18, 881-883 (1975).
-
(1975)
Solid-State Electron.
, vol.18
, pp. 881-883
-
-
Card, H.1
-
28
-
-
0015490613
-
Tunneling to traps in insulators
-
I. Lundström and C. Svensson, "Tunneling to traps in insulators," J. Appl. Phys. 43, 5045-5047 (1972).
-
(1972)
J. Appl. Phys.
, vol.43
, pp. 5045-5047
-
-
Lundström, I.1
Svensson, C.2
-
29
-
-
4243458390
-
Intrinsic electron accumulation layers on reconstructed clean InAs (100) surfaces
-
M. Noguchi, K. Hirakawa, and T. Ikoma, "Intrinsic electron accumulation layers on reconstructed clean InAs (100) surfaces," Phys. Rev. Lett. 66, 2243 (1991).
-
(1991)
Phys. Rev. Lett.
, vol.66
, pp. 2243
-
-
Noguchi, M.1
Hirakawa, K.2
Ikoma, T.3
-
30
-
-
0033691619
-
Metal-induced gap states at InAs (110) surface
-
M. G. Betti, G. Bertoni, V. Corradini, V. De Renzi, and C. Mariani, "Metal-induced gap states at InAs (110) surface," Surf. Sci. 454, 539-542 (2000).
-
(2000)
Surf. Sci.
, vol.454
, pp. 539-542
-
-
Betti, M.G.1
Bertoni, G.2
Corradini, V.3
De Renzi, V.4
Mariani, C.5
-
32
-
-
67349131254
-
2 on InAs by atomic-layer deposition
-
2 on InAs by atomic-layer deposition," Microelectron. Eng. 86, 1561-1563 (2009).
-
(2009)
Microelectron. Eng.
, vol.86
, pp. 1561-1563
-
-
Wheeler, D.1
Wernersson, L.-E.2
Fröberg, L.3
Thelander, C.4
Mikkelsen, A.5
Weststrate, K.-J.6
Sonnet, A.7
Vogel, E.8
Seabaugh, A.9
-
33
-
-
84898452426
-
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations
-
C. Wang, G. Doornbos, G. Astromskas, G. Vellianitis, R. Oxland, M. Holland, M. Huang, C. Lin, C. Hsieh, Y. Chang et al., "High-k dielectrics on (100) and (110) n-InAs: physical and electrical characterizations," AIP Adv. 4, 047108 (2014).
-
(2014)
AIP Adv.
, vol.4
, pp. 047108
-
-
Wang, C.1
Doornbos, G.2
Astromskas, G.3
Vellianitis, G.4
Oxland, R.5
Holland, M.6
Huang, M.7
Lin, C.8
Hsieh, C.9
Chang, Y.10
-
34
-
-
84885674078
-
2/InAs interfaces
-
2/InAs interfaces," Appl. Phys. Lett. 103, 143510 (2013).
-
(2013)
Appl. Phys. Lett.
, vol.103
, pp. 143510
-
-
Wang, C.1
Wang, S.2
Doornbos, G.3
Astromskas, G.4
Bhuwalka, K.5
Contreras-Guerrero, R.6
Edirisooriya, M.7
Rojas-Ramirez, J.8
Vellianitis, G.9
Oxland, R.10
Holland, M.C.11
Hsieh, C.H.12
Ramvall, P.13
Lind, E.14
Hsu, W.C.15
Wernersson, L.-E.16
Droopad, R.17
Passlack, M.18
Diaz, C.H.19
-
35
-
-
0000416414
-
Interspecimen comparison of the refractive index of fused silica
-
I. Malitson, "Interspecimen comparison of the refractive index of fused silica," J. Opt. Soc. Am. 55, 1205-1208 (1965).
-
(1965)
J. Opt. Soc. Am.
, vol.55
, pp. 1205-1208
-
-
Malitson, I.1
-
37
-
-
0026866879
-
Improving InAs double heterostructure lasers with better confinement
-
Y. Tsou, A. Ichii, and E. M. Garmire, "Improving InAs double heterostructure lasers with better confinement," IEEE J. Quantum Electron. 28, 1261-1268 (1992).
-
(1992)
IEEE J. Quantum Electron.
, vol.28
, pp. 1261-1268
-
-
Tsou, Y.1
Ichii, A.2
Garmire, E.M.3
-
38
-
-
54249124480
-
First principle derivation of gain in high-index-contrast waveguides
-
J. T. Robinson, K. Preston, O. Painter, and M. Lipson, "First principle derivation of gain in high-index-contrast waveguides," Opt. Express 16, 16659-16669 (2008).
-
(2008)
Opt. Express
, vol.16
, pp. 16659-16669
-
-
Robinson, J.T.1
Preston, K.2
Painter, O.3
Lipson, M.4
-
39
-
-
0016917534
-
Concentration-dependent absorption and spontaneous emission of heavily doped GaAs
-
H. Casey Jr and F. Stern, "Concentration-dependent absorption and spontaneous emission of heavily doped GaAs," J. Appl. Phys. 47, 631-643 (1976).
-
(1976)
J. Appl. Phys.
, vol.47
, pp. 631-643
-
-
Casey, H.1
Stern, F.2
-
40
-
-
67650333622
-
Characteristics and reliability of hafnium oxide dielectric stacks with room temperature grown interfacial anodic oxide
-
C.-H. Chang and J.-G. Hwu, "Characteristics and reliability of hafnium oxide dielectric stacks with room temperature grown interfacial anodic oxide," IEEE Trans. Device Mater. Rel. 9, 215-221 (2009).
-
(2009)
IEEE Trans. Device Mater. Rel.
, vol.9
, pp. 215-221
-
-
Chang, C.-H.1
Hwu, J.-G.2
-
41
-
-
0026193624
-
Minority-carrier confinement by doping barriers
-
J. Rimmer, J. Langer, M. Missous, J. Evans, I. Poole, A. Peaker, and K. Singer, "Minority-carrier confinement by doping barriers," Mater. Sci. Eng. B 9, 375-378 (1991).
-
(1991)
Mater. Sci. Eng. B
, vol.9
, pp. 375-378
-
-
Rimmer, J.1
Langer, J.2
Missous, M.3
Evans, J.4
Poole, I.5
Peaker, A.6
Singer, K.7
-
42
-
-
0020734417
-
Optical properties of the metals Al, Co, Cu, Au, Fe, Pb, Ni, Pd, Pt, Ag, Ti, and W in the infrared and far infrared
-
M. Ordal, L. Long, R. Bell, S. Bell, R. Bell, R. Alexander, and C. Ward, "Optical properties of the metals Al, Co, Cu, Au, Fe, Pb, Ni, Pd, Pt, Ag, Ti, and W in the infrared and far infrared," Appl. Opt. 22, 1099-1119 (1983).
-
(1983)
Appl. Opt.
, vol.22
, pp. 1099-1119
-
-
Ordal, M.1
Long, L.2
Bell, R.3
Bell, S.4
Bell, R.5
Alexander, R.6
Ward, C.7
-
43
-
-
13844313376
-
Applicability of the anomalous skin-effect theory to the optical constants of Cu, Ag, and Au in the infrared
-
A. Lenham and D. Treherne, "Applicability of the anomalous skin-effect theory to the optical constants of Cu, Ag, and Au in the infrared," J. Opt. Soc. Am. 56, 683-685 (1966).
-
(1966)
J. Opt. Soc. Am.
, vol.56
, pp. 683-685
-
-
Lenham, A.1
Treherne, D.2
-
44
-
-
0027643812
-
Low-threshold long-wave lasers (λ= 3.0-3.6 μm) based on III-V alloys
-
M. Aydaraliev, N. Zotova, S. Karandashov, B. Matveev, G. Talalakin et al., "Low-threshold long-wave lasers (λ= 3.0-3.6 μm) based on III-V alloys," Semicond. Sci. Technol. 8, 1575 (1993).
-
(1993)
Semicond. Sci. Technol.
, vol.8
, pp. 1575
-
-
Aydaraliev, M.1
Zotova, N.2
Karandashov, S.3
Matveev, B.4
Talalakin, G.5
-
45
-
-
80054905235
-
Nanoplasmonics: Past, present, and glimpse into future
-
M. I. Stockman, "Nanoplasmonics: past, present, and glimpse into future," Opt. Express 19, 22029-22106 (2011).
-
(2011)
Opt. Express
, vol.19
, pp. 22029-22106
-
-
Stockman, M.I.1
-
46
-
-
76549110303
-
High k dielectrics for future CMOS devices
-
J. Robertson, "High k dielectrics for future CMOS devices," ECS Trans. 19, 579-591 (2009).
-
(2009)
ECS Trans.
, vol.19
, pp. 579-591
-
-
Robertson, J.1
-
48
-
-
0019079984
-
Surface recombination effects in an improved theory of a p-type MIS solar cell
-
P. Landsberg and C. Klimpke, "Surface recombination effects in an improved theory of a p-type MIS solar cell," Solid-State Electron. 23, 1139-1145 (1980).
-
(1980)
Solid-State Electron.
, vol.23
, pp. 1139-1145
-
-
Landsberg, P.1
Klimpke, C.2
-
49
-
-
0019007877
-
A comparison of majority- and minority-carrier silicon MIS solar cells
-
K. Ng and H. Card, "A comparison of majority- and minority-carrier silicon MIS solar cells," IEEE Trans. Electron. Dev. 27, 716-724 (1980).
-
(1980)
IEEE Trans. Electron. Dev.
, vol.27
, pp. 716-724
-
-
Ng, K.1
Card, H.2
-
50
-
-
0001283039
-
Cross section for the recombination of an electron on a positively charged center in a semiconductor
-
V. Abakumov and I. Iassievich, "Cross section for the recombination of an electron on a positively charged center in a semiconductor," Sov. Phys. JETP 71, 657-664 (1976).
-
(1976)
Sov. Phys. JETP
, vol.71
, pp. 657-664
-
-
Abakumov, V.1
Iassievich, I.2
|