InAs hole inversion and bandgap interface state density of 2 × 1011 cm-2 eV-1 at HfO2/InAs interfaces

Applied Physics Letters

Volumn 103, Issue 14, 2013, Pages

  Wang, C H ^a,b   Wang, S W ^b   Doornbos, G ^b   Astromskas, G ^b   Bhuwalka, K ^b   Contreras Guerrero, R ^c   Edirisooriya, M ^c   Rojas Ramirez, J S ^c   Vellianitis, G ^b   Oxland, R ^b   Holland, M C ^b   Hsieh, C H ^d   Ramvall, P ^e   Lind, E ^e   Hsu, W C ^a   Wernersson, L E ^e   Droopad, R ^c   Passlack, M ^b   Diaz, C H ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TSMC Europe BV   (Belgium)

^c TEXAS STATE UNIVERSITY   (United States)

^d TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^e LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITANCE; CHARGE CARRIERS; ENERGY GAP; HAFNIUM OXIDES; III-V SEMICONDUCTORS; INDIUM ARSENIDE; TEMPERATURE;

BANDGAP INTERFACES; CAPACITANCE RESPONSE; CAPACITANCE VOLTAGE; CONVENTIONAL TECHNIQUES; EQUIVALENT OXIDE THICKNESS; FERMI-DIRAC DISTRIBUTION; INTERFACE STATE DENSITY; RESPONSE FREQUENCY;

INTERFACE STATES;

EID: 84885674078     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4820477     Document Type: Article

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