Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode

Applied Physics Letters

Volumn 102, Issue 6, 2013, Pages

  Wang, C ^a   Qu, H J ^a   Chen, W X ^a   Ran, G Z ^a   Yu, H Y ^b   Niu, B ^b   Pan, J Q ^b   Wang, W ^b  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPACT SIZE; EDGE EMISSIONS; FUNDAMENTAL COMPONENT; LOW CURRENTS; PEAK WAVELENGTH; PLASMON GENERATION; PLASMONIC; PLASMONICS; POLARIZATION RATIOS; QUANTUM-CONFINEMENT STARK EFFECTS; RECOMBINATION ZONES; SCHOTTKY; SCHOTTKY STRUCTURES; SHIFT-AND;

SEMICONDUCTOR QUANTUM WELLS;

PLASMONS;

EID: 84874230649     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792508     Document Type: Article

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