SCOPUS 정보 검색 플랫폼

Volumn 8, Issue 2, 2016, Pages 741-751

Tuning the Fermi level with topological phase transition by internal strain in a topological insulator Bi2Se3 thin film

(11) Kim, Tae Hyeon a Jeong, Kwangsik a Park, Byung Cheol a Choi, Hyejin a Park, Sang Han a Jung, Seonghoon b Park, Jaehun b Jeong, Kwang Ho a Kim, Jeong Won c Kim, Jae Hoon a Cho, Mann Ho a

a Yonsei University (South Korea)

b POSTECH (South Korea)

c Korea Research Institute of Standards and Science (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRIC INSULATORS; ENERGY GAP; FERMI LEVEL; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS; X RAY SCATTERING;

AB INITIO CALCULATIONS; PHONON VIBRATIONS; SELF-ORGANIZED ORDERING; SPINTRONIC APPLICATIONS; TOPOLOGICAL INSULATORS; TOPOLOGICAL PHASE; UV PHOTOEMISSION; VAN HOVE SINGULARITIES;

CRYSTAL STRUCTURE;

EID: 84952318607 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c5nr06086a Document Type: Article

Times cited : (26)

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