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Volumn 82, Issue 12, 2010, Pages

Topological electronic structure in half-Heusler topological insulators

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Indexed keywords


EID: 77957732851     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.82.125208     Document Type: Article
Times cited : (310)

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    • In particular, Δ increases as V increases in the THH compounds, and the band gap decreases in the group III-V zinc-blende semiconductors with increasing atomic number.
    • In particular, Δ increases as V increases in the THH compounds, and the band gap decreases in the group III-V zinc-blende semiconductors with increasing atomic number.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.