SiGe bipolar junction transistors for microwave power applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1997, Pages 1299-1302

  Henderson, Gregory N ^a   O'Keefe, Matthew F ^a   Boles, Timothy E ^a   Noonan, Paulette ^a   Sledziewski, John M ^a   Brown, Brian M ^a  

^a Corporate R&D ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; GAIN MEASUREMENT; GERMANIUM COMPOUNDS; INTERMODULATION; POWER AMPLIFIERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SIGNAL DISTORTION;

BIPOLAR JUNCTION TRANSISTORS; INTERMODULATION DISTORTION;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0030647319     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)