Small- and large-signal operation of X-band CE and CB SiGe/Si power HBT's

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1999, Pages 1191-1194

  Rieh, Jae Sung ^a   Lu, Liang Hung ^a   Ma, Zhenqiang ^a   Liu, Xuefeng ^a   Katehi, P B ^a   Bhattacharya, Pallab ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MULTIFINGER DEVICES; X-BAND OPERATION;

ELECTRIC POTENTIAL; FABRICATION; GAIN MEASUREMENT; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033360057     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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2. B. Bayraktaroglu, F. Ali, J. Mason, and P. Smith, "Rip-chip X-band operation of thermally-shunted microwave HBT's with sub-micron emitters," IEEE MTT-S Digest, 1996, pp. 685-687.
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6. U. Erben, M. Wahl, A. Schüppen, and H. Schumacher, "Class-A SiGe HBT power amplifiers at C-band frequencies," IEEE Microwave and Guided Wave Utters, Vol. 5, No. 12,1995, pp. 435-436.
7. J. -S. Rich, L. -H. Lu, L. P. B. Katehi, P. Bhattacharya, E. T. Croke, G. E. Ponchak, and S. A. Alterovitz, "X- and Kuband amplifiers based on Si/SiGe HBTs and micromachined lumped components," IEEE Transactions on Microwave Theory and Techniques, Vol. 46, No. 5, pp. 685-694, May 1998.