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Volumn 2001-January, Issue , 2001, Pages 105-110

CAD issues for CMOS VLSI design in SOI

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; DIGITAL INTEGRATED CIRCUITS; ELECTRIC NETWORK ANALYSIS; INTEGRATED CIRCUIT DESIGN; TIMING CIRCUITS; VLSI CIRCUITS;

EID: 84949959065     PISSN: 19483287     EISSN: 19483295     Source Type: Conference Proceeding    
DOI: 10.1109/ISQED.2001.915213     Document Type: Conference Paper
Times cited : (5)

References (19)
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    • SOI for digital CMOS VLSI: Design considerations and advances
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    • Chuang, C.T.1    Lu, P.-F.2    Anderson, C.J.3
  • 2
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    • A 580MHz RISC microprocessor in SOI
    • M. Canada et al. A 580MHz RISC microprocessor in SOI. In Digest Tech. Papers, ISSCC, pages 430-431, 1999.
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    • Canada, M.1
  • 3
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    • A 0.20 μm 1.8 V SOI 550 MHz 64b PowerPC microprocessor with Cu interconnects
    • D. H. Allen et al. A 0.20 μm 1.8 V SOI 550 MHz 64b PowerPC microprocessor with Cu interconnects. In Digest Tech. Papers, ISSCC, pages 438-439, 1999.
    • (1999) Digest Tech. Papers, ISSCC , pp. 438-439
    • Allen, D.H.1
  • 7
    • 0031210445 scopus 로고    scopus 로고
    • Floating-body effects in partially depleted SOI CMOS cicuits
    • August
    • Pong-Fei Lu et al. Floating-body effects in partially depleted SOI CMOS cicuits. IEEE Journal of Solid-State Circuits, 32(8): 1241-1253, August 1997.
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    • Lu, P.-F.1
  • 8
    • 0023386645 scopus 로고
    • Timing analysis and performance improvement of MOS VLSI designs
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    • Jouppi, N.P.1
  • 9
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    • Harmony: Static noise analysis for deep-submicron digital integrated circuits
    • August
    • K. L. Shepard, V. Narayanan, and R. Rose. Harmony: Static noise analysis for deep-submicron digital integrated circuits. IEEE Trans. CAD, pages 1132-1150, August 1999.
    • (1999) IEEE Trans. CAD , pp. 1132-1150
    • Shepard, K.L.1    Narayanan, V.2    Rose, R.3
  • 10
    • 0029409871 scopus 로고
    • On the transient operation of partially depleted SOI NMOSFET's
    • J. Gautier and J. Y.-C. Sun. On the transient operation of partially depleted SOI NMOSFET's. IEEE Electron Device Letters, 16: 497-499, 1995.
    • (1995) IEEE Electron Device Letters , vol.16 , pp. 497-499
    • Gautier, J.1    Sun, J.Y.-C.2
  • 11
    • 0023450670 scopus 로고
    • Anamalous subthreshold current-voltage characteristics of n-channel SOI MOSFET's
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  • 12
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    • Current-voltage characteristics of thinfilm SOI MOSFETs in strong inversion
    • H.-K. Lim and J. G. Fossum. Current-voltage characteristics of thinfilm SOI MOSFETs in strong inversion. IEEE Transactions on Electron Devices, 31(4): 401-408, 1984.
    • (1984) IEEE Transactions on Electron Devices , vol.31 , Issue.4 , pp. 401-408
    • Lim, H.-K.1    Fossum, J.G.2
  • 13
  • 14
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    • L. T. Su, J. B. Jacobs, J. Chung, and D. A. Antoniadis. Deep submicrometer channel design in silicon-on-insulator (SOI) MOSFETs. IEEE Electron Device Letters, 15(5): 183-185, 1994.
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  • 16
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    • Static noise analysis for digital integrated circuits in partially-depleted silicon-on-insulator technology
    • K. L. Shepard and D.-J. Kim. Static noise analysis for digital integrated circuits in partially-depleted silicon-on-insulator technology. In ACM/IEEE Design Automation Conference, 2000.
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    • Shepard, K.L.1    Kim, D.-J.2
  • 17
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    • S. A. Parke, J. E. Moon, H. C. Wann, P. K. Ko, and C. Hu. Design for suppression of gate-induced drain leakage in LDD MOSFETs using a quasi-two-dimensional analytical model. IEEE Transactions on Electron Devices, 39(7): 1697-1703, 1992.
    • (1992) IEEE Transactions on Electron Devices , vol.39 , Issue.7 , pp. 1697-1703
    • Parke, S.A.1    Moon, J.E.2    Wann, H.C.3    Ko, P.K.4    Hu, C.5
  • 19
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    • for datasheets and a sample output report. Technical report
    • See http://www.cadmos.com/pacific.htm for datasheets and a sample output report. Technical report.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.