SiC and Si transistors comparison in boost converter

15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe

Volumn , Issue , 2012, Pages

  Zapico, Alberto ^a   Gabiola, Igor ^b   Apinaniz, Susana ^b   Santiago, Francisco ^b   Pujana, Ainhoa ^b   Rodriguez, Alberto ^a   Briz, Fernando ^a  

^a UNIVERSITY OF OVIEDO   (Spain)

^b TECNALIA RESEARCH AND INNOVATION   (Spain)

Author keywords

power electronics; Semiconductor devices; SiC devices

Indexed keywords

ACTIVE FIELD; BOOST CONVERTER; BREAKDOWN FIELD; DC-TO-DC CONVERTERS; EUROPEAN EFFICIENCIES; FIGURE OF MERITS; INPUT VOLTAGES; OPERATING TEMPERATURE; OUTPUT POWER; OUTPUT VOLTAGES; POTENTIAL LIMITS; POWER DEVICES; SIC DEVICES; SIC JFET; SIC MOSFET; SILICON CARBIDES (SIC); WIDE-BAND-GAP;

ELECTRIC EQUIPMENT; MOTION CONTROL; POWER ELECTRONICS; SEMICONDUCTOR DEVICES; SILICON; TRANSISTORS;

SILICON CARBIDE;

EID: 84874236743     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPEPEMC.2012.6397197     Document Type: Conference Paper

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