Switching performance evaluation of commercial SiC power devices (SiC JFET and SiC MOSFET) in relation to the gate driver complexity

2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013

Volumn , Issue , 2013, Pages 233-239

  Pittini, Riccardo ^a   Zhang, Zhe ^a   Andersen, Michael A E ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

Gate Driver; SiC JFET; SiC MOSFET; Silicon Carbide (SiC); Switching losses

Indexed keywords

GATE DRIVERS; SIC JFET; SIC MOSFET; SILICON CARBIDES (SIC); SWITCHING LOSS;

COST BENEFIT ANALYSIS; ELECTRIC EQUIPMENT; ENERGY CONVERSION; EXHIBITIONS; MOSFET DEVICES; SILICON; SWITCHING;

SILICON CARBIDE;

EID: 84883660062     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE-Asia.2013.6579102     Document Type: Conference Paper

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