Antenna-coupled photon emission from hexagonal boron nitride tunnel junctions

Nature Nanotechnology

Volumn 10, Issue 12, 2015, Pages 1058-1063

  Parzefall, M ^a   Bharadwaj, P ^a   Jain, A ^a   Taniguchi, T ^b   Watanabe, K ^b   Novotny, L ^a  

^a ETH ZURICH   (Switzerland)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE; DATA HANDLING; ELECTROMAGNETIC FIELDS; ELECTRONS; GOLD COMPOUNDS; III-V SEMICONDUCTORS; LIGHT; METAL INSULATOR BOUNDARIES; NANOTECHNOLOGY; NITRIDES; PHOTONS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SLOT ANTENNAS; ULTRAFAST LASERS;

ELECTRON HOLE PAIRS; FAR-FIELD RADIATION; HEXAGONAL BORON NITRIDE; METAL INSULATOR METALS; MODULATION BANDWIDTH; ON-CHIP INTEGRATION; PHOTON CONVERSION EFFICIENCIES; SPONTANEOUS RECOMBINATION RATE;

TUNNEL JUNCTIONS;

BORON; BORON NITRIDE; GOLD; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL INTERACTION; ELASTICITY; ELECTROMAGNETIC FIELD; ELECTROMAGNETIC RADIATION; ELECTRON TRANSPORT; FREQUENCY MODULATION; LIGHT; OPTICS; PARTICLE SIZE; PHOTON; PRIORITY JOURNAL; SCANNING TUNNELING MICROSCOPY;

EID: 84949316939     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2015.203     Document Type: Article

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