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Volumn 2002-January, Issue , 2002, Pages 487-491
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Studying the impact of gate tunneling on dynamic behaviors of partially-depleted SOI CMOS using BSIMPD
a a a a |
Author keywords
Bridge circuits; Circuit simulation; Computational modeling; Delay; History; Hysteresis; Inverters; Semiconductor device modeling; SPICE; Tunneling
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Indexed keywords
BRIDGE CIRCUITS;
CIRCUIT SIMULATION;
DELAY CIRCUITS;
DESIGN;
ELECTRIC INVERTERS;
ELECTRIC NETWORK ANALYSIS;
ELECTRON TUNNELING;
HISTORY;
HYSTERESIS;
INTEGRATED CIRCUIT DESIGN;
INTEGRATED CIRCUIT MANUFACTURE;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DEVICES;
TABLE LOOKUP;
COMPUTATIONAL MODEL;
DELAY;
HISTORY DEPENDENCE;
INVESTIGATE AND ANALYZE;
PARTIALLY DEPLETED SOI;
PARTIALLY DEPLETED SOI CMOS;
PERFORMANCE BENEFITS;
TUNNELING MECHANISM;
SPICE;
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EID: 84948456795
PISSN: 19483287
EISSN: 19483295
Source Type: Conference Proceeding
DOI: 10.1109/ISQED.2002.996792 Document Type: Conference Paper |
Times cited : (9)
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References (20)
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