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Volumn 2002-January, Issue , 2002, Pages 487-491

Studying the impact of gate tunneling on dynamic behaviors of partially-depleted SOI CMOS using BSIMPD

Author keywords

Bridge circuits; Circuit simulation; Computational modeling; Delay; History; Hysteresis; Inverters; Semiconductor device modeling; SPICE; Tunneling

Indexed keywords

BRIDGE CIRCUITS; CIRCUIT SIMULATION; DELAY CIRCUITS; DESIGN; ELECTRIC INVERTERS; ELECTRIC NETWORK ANALYSIS; ELECTRON TUNNELING; HISTORY; HYSTERESIS; INTEGRATED CIRCUIT DESIGN; INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; TABLE LOOKUP;

EID: 84948456795     PISSN: 19483287     EISSN: 19483295     Source Type: Conference Proceeding    
DOI: 10.1109/ISQED.2002.996792     Document Type: Conference Paper
Times cited : (9)

References (20)
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  • 11
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    • A. Wei et al., IEEE EDL, vol. 16, p. 494, Nov. 1995.
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  • 17
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    • J. Gautier et al., IEEE EDL, vol. 16, p. 497, Nov. 1995.
    • (1995) IEEE EDL , vol.16 , pp. 497
    • Gautier, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.