Mechanical integrity of a carbon nanotube/copper-based through-silicon via for 3D integrated circuits: A multi-scale modeling approach

Nanotechnology

Volumn 26, Issue 48, 2015, Pages

  Awad, Ibrahim ^a   Ladani, Leila ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

3D IC; carbon nanotubes; finite element analysis; interconnects; molecular dynamics; multi scale modeling; through silicon via

Indexed keywords

ADHESION; BENDING (DEFORMATION); CARBON NANOTUBES; ELECTRONICS PACKAGING; FINITE ELEMENT METHOD; INTEGRATED CIRCUIT INTERCONNECTS; INTEGRATED CIRCUIT MANUFACTURE; MOLECULAR DYNAMICS; NANOTUBES; OPTICAL INTERCONNECTS; PLASTIC DEFORMATION; SILICON; YARN;

MECHANICAL AND ELECTRICAL PROPERTIES; MICROELECTRONIC PACKAGE; MOLECULAR DYNAMICS SIMULATIONS; MULTI-SCALE MODELING; THERMO-MECHANICAL BEHAVIORS; THERMO-MECHANICAL LOADING; THROUGH SILICON VIAS; THROUGH-SILICON-VIA;

THREE DIMENSIONAL INTEGRATED CIRCUITS;

EID: 84947234163     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/26/48/485705     Document Type: Article

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