Effects of interfacial bonding in the Si-carbon nanotube nanocomposite: A molecular dynamics approach

Journal of Applied Physics

Volumn 112, Issue 4, 2012, Pages

  Kim, Byung Hyun ^a,b   Lee, Kwang Ryeol ^a   Chung, Yong Chae ^b   Gunn Lee, June ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING STRENGTH; ENHANCED PROPERTIES; INTERFACIAL BONDING; LOAD TRANSFER; MAXIMUM STRENGTH; PULL-OUT; REACTIVE EMPIRICAL BOND ORDERS; SI MATRIX; YOUNG'S MODULUS;

BRITTLE FRACTURE; CARBON NANOTUBES; CRACK TIPS; MECHANICAL PROPERTIES; NANOCOMPOSITES; SILICON;

MOLECULAR DYNAMICS;

EID: 84865858233     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4748133     Document Type: Article

References (23)

1. R. H. Baughman, A. A. Zakhidov, and W. A. Heer, Science 297, 787 (2002). 10.1126/science.1060928
2. P. M. Ajayan and J. M. Tour, Nature 447, 1066 (2007). 10.1038/4471066a
3. K. T. Kim, S. I. Cha, T. Gemming, J. Eckert, and S. H. Hong, Small 4 (11), 1936 (2008). 10.1002/smll.200701223
4. S. I. Cha, K. T. Kim, S. N. Arshad, C. B. Mo, and S. H. Hong, Adv. Mater. 17, 1377 (2005). 10.1002/adma.200401933
5. H. Kwon, M. Estili, E. Takagi, T. Miyazaki, and A. Kawasaki, Carbon 47, 570 (2009). 10.1016/j.carbon.2008.10.041
6. D. Jiang, K. Thomson, J. D. Kuntz, J. W. Ager, and A. K. Mukherjee, Scr. Mater. 56, 959 (2007). 10.1016/j.scriptamat.2007.02.007
7. K. E. Thomson, D. Jiang, R. O. Ritchie, and A. K. Mukherjee, Appl. Phys. A 89, 651 (2007). 10.1007/s00339-007-4253-9
8. N. P. Padture and W. A. Curtin, Scr. Mater. 58, 989 (2008). 10.1016/j.scriptamat.2008.01.038
9. D. Jiang and A. K. Mukherjee, Scr. Mater. 58, 991 (2008). 10.1016/j.scriptamat.2008.01.037
10. K. Talukdar and A. K. Mitra, Molecular dynamics simulation study on the mechanical properties and fracture behavior of single-wall carbon nanotubes., in Carbon Nanotubes-Synthesis, Characterization, Applications, edited by, S. Yellampalli, (Intech, 2011), Chap..
11. Z. Yao, C.-C. Zhu, M. Cheng, and J. Liu, Comput. Mater. Sci. 22, 180 (2001). 10.1016/S0927-0256(01)00187-2
12. K. M. Liew, X. Q. He, and C. H. Wong, Acta Mater. 52, 2521 (2004). 10.1016/j.actamat.2004.01.043
13. J. Tersoff, Phys. Rev. B 38, 9902 (1988). 10.1103/PhysRevB.38.9902
14. C. Z. Wang, C. T. Chan, and K. M. Ho, Phys. Rev. B 39, 8586 (1989). 10.1103/PhysRevB.39.8586
15. M. Timonova and B. J. Thijsse, Modell. Simul. Mater. Sci. Eng. 19, 015003 (2011). 10.1088/0965-0393/19/1/015003
16. S. Plimpton, J. Comput. Phys. 117, 1 (1995). 10.1006/jcph.1995.1039
17. P. Erhart and K. Albe, Phys. Rev. B 71, 035211 (2005). 10.1103/PhysRevB.71.035211
18. S. J. Stuart, A. B. Tutein, and J. A. Harrison, J. Chem. Phys. 112, 6472 (2000). 10.1063/1.481208
19. J. E. Jones, Proc. R. Soc. London, Ser. A 106, 463 (1924). 10.1098/rspa.1924.0082
20. K. Sato, T. Yoshioka, T. Ando, M. Shikida, and T. Kawabata, Sens. Actuators, A 70, 148 (1998). 10.1016/S0924-4247(98)00125-3
21. K. E. Petersen, Proc. IEEE. 70, 420 (1982). 10.1109/PROC.1982.12331
22. M.-F. Yu, B. S. Files, S. Arepalli, and R. S. Rouoff, Phys. Rev. Lett. 84, 5552 (2000). 10.1103/PhysRevLett.84.5552
23. L. Gao, L. Jiang, and J. Sun, J. Electroceram. 17, 51 (2006). 10.1007/s10832-006-9935-8