-
1
-
-
84861125089
-
Metal-oxide RRAM
-
Jun.
-
H.-S. P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F. T. Chen, and M.-J. Tsai, "Metal-oxide RRAM," Proc. IEEE, vol. 100, no. 6, pp. 1951-1970, Jun. 2012. DOI: 10.1109/JPROC.2012.2190369
-
(2012)
Proc. IEEE
, vol.100
, Issue.6
, pp. 1951-1970
-
-
Wong, H.-S.P.1
Lee, H.-Y.2
Yu, S.3
Chen, Y.-S.4
Wu, Y.5
Chen, P.-S.6
Lee, B.7
Chen, F.T.8
Tsai, M.-J.9
-
2
-
-
77951026760
-
Nanoscale memristor device as synapse in neuromorphic systems
-
S. H. Jo, T. Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, and W. Lu, "Nanoscale memristor device as synapse in neuromorphic systems," Nano Lett., vol. 10, no. 4, pp. 1297-1301, 2010. DOI: 10.1021/nl904092h
-
(2010)
Nano Lett.
, vol.10
, Issue.4
, pp. 1297-1301
-
-
Jo, S.H.1
Chang, T.2
Ebong, I.3
Bhadviya, B.B.4
Mazumder, P.5
Lu, W.6
-
3
-
-
84929095672
-
Training and operation of an integrated neuromorphic network based on metal-oxide memristors
-
M. Prezioso, F. Merrikh-Bayat, B. D. Hoskins, G. C. Adam, K. K. Likharev, and D. B. Strukov, "Training and operation of an integrated neuromorphic network based on metal-oxide memristors," Nature, vol. 521, pp. 61-64, 2015. DOI: 10.1038/nature14441
-
(2015)
Nature
, vol.521
, pp. 61-64
-
-
Prezioso, M.1
Merrikh-Bayat, F.2
Hoskins, B.D.3
Adam, G.C.4
Likharev, K.K.5
Strukov, D.B.6
-
4
-
-
84938273743
-
Variability-tolerant convolutional neural network for pattern recognition applications based on OxRAM synapses
-
Dec.
-
D. Garbin, O. Bichler, E. Vianello, Q. Rafhay, C. Gamrat, L. Perniola, G. Ghibaudo, and B. DeSalvo, "Variability-tolerant convolutional neural network for pattern recognition applications based on OxRAM synapses," in Proc. IEEE Int. Electron Devices Meeting, Dec. 2014, pp. 28.4.1-28.4.4. DOI: 10.1109/IEDM.2014.7047126
-
(2014)
Proc. IEEE Int. Electron Devices Meeting
, pp. 2841-2844
-
-
Garbin, D.1
Bichler, O.2
Vianello, E.3
Rafhay, Q.4
Gamrat, C.5
Perniola, L.6
Ghibaudo, G.7
DeSalvo, B.8
-
5
-
-
84876106868
-
RRAM-based synapse for neuromorphic system with pattern recognition function
-
Dec.
-
S. Park, H. Kim, M. Choo, J. Noh, A. Sheri, S. Jung, K. Seo, J. Park, S. Kim, W. Lee, J. Shin, D. Lee, G. Choi, J. Woo, E. Cha, J. Jang, C. Park, M. Jeon, B. Lee, B. H. Lee, and H. Hwang, "RRAM-based synapse for neuromorphic system with pattern recognition function," in Proc. IEEE Int. Electron Devices Meeting, Dec. 2012, pp. 10.2.1-10.2.4. DOI: 10.1109/IEDM.2012.6479016
-
(2012)
Proc. IEEE Int. Electron Devices Meeting
, pp. 1021-1024
-
-
Park, S.1
Kim, H.2
Choo, M.3
Noh, J.4
Sheri, A.5
Jung, S.6
Seo, K.7
Park, J.8
Kim, S.9
Lee, W.10
Shin, J.11
Lee, D.12
Choi, G.13
Woo, J.14
Cha, E.15
Jang, J.16
Park, C.17
Jeon, M.18
Lee, B.19
Lee, B.H.20
Hwang, H.21
more..
-
6
-
-
84883517906
-
Synaptic electronics: Materials, devices and applications
-
D. Kuzum, S. Yu, and H.-S. P. Wong, "Synaptic electronics: Materials, devices and applications," Nanotechnology, vol. 24, no. 38, p. 382001, 2013. DOI: 10.1088/0957-4484/24/38/382001
-
(2013)
Nanotechnology
, vol.24
, Issue.38
, pp. 382001
-
-
Kuzum, D.1
Yu, S.2
Wong, H.-S.P.3
-
7
-
-
84856173450
-
High precision tuning of state for memristive devices by adaptable variationtolerant algorithm
-
F. Alibart, L. Gao, B. D. Hoskins, and D. B. Strukov, "High precision tuning of state for memristive devices by adaptable variationtolerant algorithm," Nanotechnology, vol. 23, no. 7, p. 075201, 2012. DOI: 10.1088/0957-4484/23/7/075201
-
(2012)
Nanotechnology
, vol.23
, Issue.7
, pp. 075201
-
-
Alibart, F.1
Gao, L.2
Hoskins, B.D.3
Strukov, D.B.4
-
8
-
-
84946092584
-
Programming protocol optimization for analog weight tuning in resistive memories
-
Jun.
-
L. Gao and S. Yu, "Programming protocol optimization for analog weight tuning in resistive memories," in Proc. 73rd Annu. Device Res. Conf. (DRC), Jun. 2015, p. 184. DOI: 10.1109/DRC.2015.7175619
-
(2015)
Proc. 73rd Annu. Device Res. Conf. (DRC)
, pp. 184
-
-
Gao, L.1
Yu, S.2
-
9
-
-
84930508154
-
Low-temperature characteristics of HfOx-based resistive random access memory
-
Jun.
-
R. Fang, W. Chen, L. Gao, W. Yu, and S. Yu, "Low-temperature characteristics of HfOx-based resistive random access memory," IEEE Electron Device Lett., vol. 36, no. 6, pp. 567-569, Jun. 2015. DOI: 10.1109/LED.2015.2420665
-
(2015)
IEEE Electron Device Lett.
, vol.36
, Issue.6
, pp. 567-569
-
-
Fang, R.1
Chen, W.2
Gao, L.3
Yu, W.4
Yu, S.5
-
10
-
-
79952640478
-
Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory
-
S. Yu, Y. Wu, and H.-S. P. Wong, "Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory," Appl. Phys. Lett., vol. 98, no. 10, p. 103514, 2011. DOI: 10.1063/1.3564883
-
(2011)
Appl. Phys. Lett.
, vol.98
, Issue.10
, pp. 103514
-
-
Yu, S.1
Wu, Y.2
Wong, H.-S.P.3
-
11
-
-
84866886745
-
A SPICE compact model of metal oxide resistive switching memory with variations
-
Oct.
-
X. Guan, S. Yu, and H.-S. P. Wong, "A SPICE compact model of metal oxide resistive switching memory with variations," IEEE Electron Device Lett., vol. 33, no. 10, pp. 1405-1407, Oct. 2012. DOI: 10.1109/LED.2012.2210856
-
(2012)
IEEE Electron Device Lett.
, vol.33
, Issue.10
, pp. 1405-1407
-
-
Guan, X.1
Yu, S.2
Wong, H.-S.P.3
-
12
-
-
79957568212
-
Design implications of memristor-based RRAM cross-point structures
-
Mar.
-
C. Xu, X. Dong, N. P. Jouppi, and Y. Xie, "Design implications of memristor-based RRAM cross-point structures," in Proc. Design, Autom. Test Eur. Conf. Exhibit. (DATE), Mar. 2011, pp. 1-6. DOI: 10.1109/DATE.2011.5763125
-
(2011)
Proc. Design, Autom. Test Eur. Conf. Exhibit. (DATE)
, pp. 1-6
-
-
Xu, C.1
Dong, X.2
Jouppi, N.P.3
Xie, Y.4
-
13
-
-
84964556162
-
Mitigating effects of non-ideal synaptic device characteristics for on-chip learning
-
P.-Y. Chen, B. Lin, I.-T. Wang, T.-H. Hou, J. Ye, S. Vrudhula, J. Seo, Y. Cao, and S. Yu, "Mitigating effects of non-ideal synaptic device characteristics for on-chip learning," in Proc. Int. Conf. Comput. Aided Design (ICCAD), 2015.
-
(2015)
Proc. Int. Conf. Comput. Aided Design (ICCAD)
-
-
Chen, P.-Y.1
Lin, B.2
Wang, I.-T.3
Hou, T.-H.4
Ye, J.5
Vrudhula, S.6
Seo, J.7
Cao, Y.8
Yu, S.9
|