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Volumn 2015-July, Issue , 2015, Pages 13-16

Nonvolatile logic and memory devices based on spintronics

Author keywords

magnetic tunnel junction; nonvolatile computer; power gating; spintronics; STT MRAM

Indexed keywords

COMPUTER CIRCUITS; MAGNETIC DEVICES; MEMORY ARCHITECTURE; MRAM DEVICES; SPINTRONICS; STORAGE ALLOCATION (COMPUTER); TUNNEL JUNCTIONS;

EID: 84946235556     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCAS.2015.7168558     Document Type: Conference Paper
Times cited : (12)

References (8)
  • 6
    • 84883428485 scopus 로고    scopus 로고
    • An MTJ-based nonvolatile associative memory architecture with intelligent power-saving scheme for high-speed low-power recognition applications
    • Y. Ma, T. Shibata, and T. Endoh, "An MTJ-based nonvolatile associative memory architecture with intelligent power-saving scheme for high-speed low-power recognition applications", 1EEE 1nternational Symposium on Circuits and Systems (ISCAS), 2013, p. 1248.
    • (2013) 1EEE 1nternational Symposium on Circuits and Systems (ISCAS) , pp. 1248
    • Ma, Y.1    Shibata, T.2    Endoh, T.3
  • 7
    • 84857474228 scopus 로고    scopus 로고
    • High-density and low-power nonvolatile static random access memory using spin-transfer-torque magnetic tunnel junction
    • T. Ohsawa, F. Iga, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, "High-density and low-power nonvolatile static random access memory using spin-transfer-torque magnetic tunnel junction," Jpn. J. Appl. Phys. 51 (2012) 02BD01.
    • (2012) Jpn. J. Appl. Phys. , vol.51 , pp. 02BD01
    • Ohsawa, T.1    Iga, F.2    Ikeda, S.3    Hanyu, T.4    Ohno, H.5    Endoh, T.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.