New Approaches to Improve the Endurance of TiN/HfO2/TiN Capacitor during the Back-end Process for 70nm DRAM Device

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 661-664

  Choi, Jae Hyoung ^a   Chung, Jeong Hee ^a   Oh, Se Hoon ^a   Choi, Jeong Sik ^a   Yoo, Cha Young ^a   Kim, Sung Tae ^a   Chung, U In ^a   Moon, Joo Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DEGRADATION; DIELECTRIC FILMS; ELECTRODES; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM);

CAPACITORS;

EID: 0842331311     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. 2/TiN Capacitor Technology Applicable to 70nm Generation DRAMs" VLSI Tech. Dig., p.73, (2003).
2. 2 Cell Pad Structure for 70nm Stand-alone and Embedded DRAM Technology and Beyond", IEDM Tech. Dig., p. 160, (2002).
3. S. Kamiyama, et al., "Highly Reliable MIM Capacitor Technology Using Low Pressure CVD-WN Cylinder Storage-Node for 0.12μm-scale Embedded DRAM", VLSI Tech. Dig., p.39 (1999).
4. y Advanced Gate Dielectrics with Poly-Si Gate Electrode", IEDM Tech. Dig., p.187, (2002).