Impact of oxide liner properties on TSV Cu pumping and TSV stress

IEEE International Reliability Physics Symposium Proceedings

Volumn 2015-May, Issue , 2015, Pages 4C51-4C510

  De Messemaeker, J ^a   Pedreira, O Varela ^a   Moussa, A ^a   Nabiollahi, N ^a,b   Vanstreels, K ^a   Van Huylenbroeck, S ^a   Philipsen, H ^a   Verdonck, P ^a   Vandevelde, B ^a   De Wolf, I ^a,b   Beyne, E ^a   Croes, K ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Cu pumping; liner densification; low k dielectric liner; oxide liner; Through silicon via; TSV; TSV stress

Indexed keywords

COPPER; DENSIFICATION; DIELECTRIC MATERIALS; ELECTRONICS PACKAGING; INTEGRATED CIRCUIT INTERCONNECTS; LOW-K DIELECTRIC; PUMPS; SILICA; SILICON; SILICON OXIDES;

CU PUMPING; HIGH TEMPERATURE; LINER SYSTEMS; LINER THICKNESS; OXIDE LINERS; STRESS INCREASE; THROUGH-SILICON-VIA; THROUGH-SILICON-VIA (TSV);

THREE DIMENSIONAL INTEGRATED CIRCUITS;

EID: 84942935831     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2015.7112736     Document Type: Conference Paper

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