Cu pumping in TSVs: Effect of pre-CMP thermal budget

Microelectronics Reliability

Volumn 51, Issue 9-11, 2011, Pages 1856-1859

  De Wolf, I ^a,b   Croes, K ^a   Varela Pedreira, O ^a   Labie, R ^a   Redolfi, A ^a   Van De Peer, M ^a   Vanstreels, K ^a   Okoro, C ^a   Vandevelde, B ^a   Beyne, E ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-END OF LINES; HIGH TEMPERATURE; MAXIMUM TEMPERATURE; OUT-OF-PLANE; THERMAL BUDGET; THROUGH SILICON VIAS;

ASPECT RATIO; BUDGET CONTROL; PUMPS;

THERMAL EXPANSION;

EID: 80052944577     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.06.003     Document Type: Conference Paper

References (6)

1. E. Beyne 3D system integration technologies VLSI Technol Syst Appl Conf 1 2006 1 9
2. Garrou P. Researchers strive for copper TSV reliability. SemiInt December, 2009.
3. Okoro C, Huyghebaert C, Van Olmen J, Labie R, Lambrinou K, Vandevelde B, et al. Elimination of the axial deformation problem of Cu-TSV in 3D integration. In: Stress-induced phenomena in metallization: 11th international workshop, Dresden, Germany, 12-14 April 2010, p. 214-20.
4. Lu KH. Thermo-mechanical reliability of 3-D interconnects containing through-silicon-vias (TSVs), PhD thesis. Fac Graduate School of the Univ of Texas at Austin; 2010.
5. D.S. Gardiner, and P.A. Flinn Mechanical stress as a function of temperature for aluminum alloy films J Appl Phys 67 1990 183101844
6. G.G. Stoney The tension of metallic films deposited by electrolysis Proc Roy Soc London A 82 1909 172 175