Roadmap for Emerging Materials for Spintronic Device Applications

IEEE Transactions on Magnetics

Volumn 51, Issue 10, 2015, Pages

  Hirohata, Atsufumi ^a   Sukegawa, Hiroaki ^b   Yanagihara, Hideto ^c   Zutic, Igor ^d   Seki, Takeshi ^e   Mizukami, Shigemi ^f   Swaminathan, Raja ^g  

^a UNIVERSITY OF YORK   (United Kingdom)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d UNIVERSITY AT BUFFALO   (United States)

^e TOHOKU UNIVERSITY   (Japan)

^f TOHOKU UNIVERSITY   (Japan)

^g INTEL CORPORATION   (United States)

Author keywords

half metallic ferromagnets; Magnetic anisotropy; Magnetic materials; Spintronics

Indexed keywords

ACTUATOR DISKS; ANISOTROPY; FERROMAGNETIC MATERIALS; FERROMAGNETISM; HARD DISK STORAGE; MAGNETIC ACTUATORS; MAGNETIC ANISOTROPY; MAGNETIC DEVICES; MAGNETIC MATERIALS; MAGNETIC SEMICONDUCTORS; MAGNETIC STORAGE; MAGNETISM; MAGNETOELECTRONICS; MAGNETS; MANGANESE; NANOMAGNETICS; NANOTECHNOLOGY; OXIDE MINERALS; POLARIZATION; RANDOM ACCESS STORAGE; SPIN POLARIZATION; TUNNEL JUNCTIONS;

ANISOTROPIC FERROMAGNET; DILUTE MAGNETIC SEMICONDUCTORS; HALF METALLIC FERROMAGNETS; MAGNETIC RANDOM ACCESS MEMORY; PERPENDICULAR ANISOTROPY; SENSORS AND ACTUATORS; SPIN-POLARIZED ELECTRONS; SPIN-TORQUE OSCILLATORS;

GYRATORS;

EID: 84942354103     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2015.2457393     Document Type: Article

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