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Volumn 87, Issue 24, 2005, Pages 1-3

Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; LIGHT POLARIZATION; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 30344479963     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2146064     Document Type: Article
Times cited : (104)

References (26)
  • 10
    • 30344463438 scopus 로고    scopus 로고
    • 1 mW excitation power corresponds to a carrier density of about 2.1× 1012 cm-2. This relationship is also used for the simulations.
    • 1 mW excitation power corresponds to a carrier density of about 2.1× 1012 cm-2. This relationship is also used for the simulations.
  • 20
    • 30344481492 scopus 로고    scopus 로고
    • Spin relaxation at room temperature is governed by the Dyakonov-Perel mechanism. For this mechanism the spin relaxation time follows τs ∝ E e1 -2, where Ee1 is the electron confinement energy.
    • Spin relaxation at room temperature is governed by the Dyakonov-Perel mechanism. For this mechanism the spin relaxation time follows τs ∝ E e1 -2, where Ee1 is the electron confinement energy.
  • 23
    • 30344487748 scopus 로고    scopus 로고
    • Valence-band mixing and therefore gain characteristics change with crystal orientation. The reduced symmetry in (110) QWs will favor a stable, slightly elliptically polarized laser mode.
    • Valence-band mixing and therefore gain characteristics change with crystal orientation. The reduced symmetry in (110) QWs will favor a stable, slightly elliptically polarized laser mode.
  • 25
    • 30344431610 scopus 로고    scopus 로고
    • At the high excitation densities shown in Fig. 3(b), the PL lines of the QW and the GaAs substrate are strongly broadened and overlap spectrally. The values for τs were obtained from single-exponential fits to the degree of polarization starting about 175 ps after laser excitation when the short-lived PL from the substrate has decayed.
    • At the high excitation densities shown in Fig. 3(b), the PL lines of the QW and the GaAs substrate are strongly broadened and overlap spectrally. The values for τs were obtained from single-exponential fits to the degree of polarization starting about 175 ps after laser excitation when the short-lived PL from the substrate has decayed.
  • 26
    • 30344481213 scopus 로고    scopus 로고
    • The electron spin polarization in an electrically pumped VCSEL must be achieved in a spin injector. The spin aligner should be placed directly next to the QWs to avoid loss of spin polarization during transport from the spin injector to the gain medium.
    • The electron spin polarization in an electrically pumped VCSEL must be achieved in a spin injector. The spin aligner should be placed directly next to the QWs to avoid loss of spin polarization during transport from the spin injector to the gain medium.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.