Large magnetoresistance effect in epitaxial Co2Fe 0.4Mn0.6Si/Ag/Co2Fe0.4Mn 0.6Si devices

Applied Physics Express

Volumn 4, Issue 11, 2011, Pages

  Sato, Jo ^a   Oogane, Mikihiko ^a   Naganuma, Hiroshi ^a   Ando, Yasuo ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CPP-GMR; CRYSTALLINITIES; CURRENT-PERPENDICULAR-TO-PLANE GIANT MAGNETORESISTANCE; HARD DISK DRIVES; MAGNETORESISTANCE EFFECTS; MAGNETORESISTANCE RATIO; ORDERED STRUCTURES; READ HEADS; ROOM TEMPERATURE; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SI DEVICES; SI ELECTRODES; SI LAYER;

CARBON DIOXIDE; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; HARD DISK STORAGE; MAGNETIC RECORDING; MAGNETOELECTRONICS; MANGANESE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

GIANT MAGNETORESISTANCE;

EID: 81055154939     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.113005     Document Type: Article

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