Theoretical study on tunneling magnetoresistance of magnetic tunnel tunctions with D022-Mn3Z (Z = Ga, Ge)

IEEE Transactions on Magnetics

Volumn 50, Issue 1, 2014, Pages

  Miura, Yoshio ^a   Shirai, Masafumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Metal insulator interface; Numerical simulation; Spin polarized transport; Tunneling magnetoresistance (TMR)

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; ELECTRONIC STRUCTURE; GALLIUM; GALLIUM ALLOYS; GERMANIUM; MAGNETORESISTANCE; MANGANESE;

INTERFACIAL STRUCTURES; MAGNETIC TUNNEL JUNCTION; METAL INSULATOR INTERFACES; PERPENDICULAR MAGNETIC ANISOTROPY; SPIN POLARIZED TRANSPORT; SPIN-DEPENDENT TRANSPORT PROPERTIES; THEORETICAL STUDY; TUNNELING MAGNETORESISTANCE;

MAGNETIC DEVICES;

EID: 84898079578     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2013.2276625     Document Type: Article

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