Composition dependence of magnetoresistance effect and its annealing endurance in tunnel junctions having Mn-Ga electrode with high perpendicular magnetic anisotropy

Applied Physics Letters

Volumn 99, Issue 19, 2011, Pages

  Kubota, Takahide ^a   Araidai, Masaaki ^a   Mizukami, Shigemi ^a   Zhang, Xianmin ^a   Ma, Qinli ^a   Naganuma, Hiroshi ^a   Oogane, Mikihiko ^a   Ando, Yasuo ^a   Tsukada, Masaru ^a   Miyazaki, Terunobu ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DISPERSIONS; BIAS VOLTAGE DEPENDENCE; COMPOSITION DEPENDENCE; FIRST-PRINCIPLES; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTANCE EFFECTS; PERPENDICULAR MAGNETIC ANISOTROPY; TUNNEL MAGNETORESISTANCE;

DURABILITY; ELECTRIC RESISTANCE; GALLIUM; GALLIUM ALLOYS; MAGNETIC ANISOTROPY; MAGNETOELECTRONICS; MAGNETORESISTANCE; MANGANESE; TUNNEL JUNCTIONS;

MAGNETIC DEVICES;

EID: 81155144596     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3659484     Document Type: Article

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