Encapsulated Silicene: A Robust Large-Gap Topological Insulator

ACS Applied Materials and Interfaces

Volumn 7, Issue 34, 2015, Pages 19226-19233

  Kou, Liangzhi ^a   Ma, Yandong ^b   Yan, Binghai ^c   Tan, Xin ^a   Chen, Changfeng ^d   Smith, Sean C ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b JACOBS UNIVERSITY BREMEN   (Germany)

^c MAX PLANCK INSTITUTE FOR CHEMICAL PHYSICS OF SOLIDS   (Germany)

^d UNIVERSITY OF NEVADA   (United States)

Author keywords

encapsulation; first principles calculations; large gap; proximity effect; silicene; topological insulator

Indexed keywords

CALCULATIONS; ELECTRIC INSULATORS; ELECTRONIC PROPERTIES; ENCAPSULATION; ENERGY GAP; MICROELECTRONICS; QUANTUM HALL EFFECT; TRANSITION METALS;

FIRST-PRINCIPLES CALCULATION; LARGE GAP; PROXIMITY EFFECTS; SILICENE; TOPOLOGICAL INSULATORS;

SPIN HALL EFFECT;

EID: 84940867879     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b05063     Document Type: Article

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