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Volumn 7, Issue 34, 2015, Pages 19219-19225

Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si

Author keywords

dislocations; heteroepitaxy; semiconductors; substrate patterning; surface diffusion

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON MICROSCOPY; EPITAXIAL GROWTH; GERMANIUM; MERGING; MICROELECTRONICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SURFACE DIFFUSION; TEMPERATURE;

EID: 84940834493     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b05054     Document Type: Article
Times cited : (29)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.