Scaling hetero-epitaxy from layers to three-dimensional crystals

Science

Volumn 335, Issue 6074, 2012, Pages 1330-1334

  Falub, Claudiu V ^a   Von Känel, Hans ^a   Isa, Fabio ^b   Bergamaschini, Roberto ^c   Marzegalli, Anna ^c   Chrastina, Daniel ^b   Isella, Giovanni ^b   Müller, Elisabeth ^a   Niedermann, Philippe ^d   Miglio, Leo ^c  

^a ETH ZURICH   (Switzerland)

^b POLITECNICO DI MILANO   (Italy)

^c UNIVERSITY OF MILANO BICOCCA   (Italy)

^d CSEM   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

CRYSTAL; CRYSTAL STRUCTURE; DIFFUSION; ELECTRON MICROSCOPY; LATTICE DYNAMICS; LOW TEMPERATURE; NEAREST NEIGHBOR ANALYSIS; QUANTUM MECHANICS; SEMICONDUCTOR INDUSTRY; SUBSTRATE; X-RAY DIFFRACTION;

ARTICLE; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DIFFUSION; GROWTH; LOW TEMPERATURE PROCEDURES; PRIORITY JOURNAL; QUANTUM CHEMISTRY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; X RAY DIFFRACTION;

SIGE;

EID: 84858304473     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1217666     Document Type: Article

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