Low voltage resistive memory devices based on graphene oxide-iron oxide hybrid

Carbon

Volumn 94, Issue , 2015, Pages 362-368

  Rani, Janardhanan R ^a   Oh, Se I ^a   Woo, Jeong Min ^a   Jang, Jae Hyung ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SPACE CHARGE; GAMMA RAYS; GRAPHENE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IRON; OXIDE FILMS; PLATINUM; SWITCHING; SWITCHING SYSTEMS; TIN OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CURRENT CONDUCTION MECHANISMS; DEVICE CHARACTERISTICS; ELECTRICAL SWITCHING; INDIUM TIN OXIDE ELECTRODES; RESISTIVE SWITCHING MECHANISMS; RESISTIVE SWITCHING MEMORY; SPACE CHARGE LIMITED CONDUCTION; TRAP-CHARGE LIMITEDS;

IRON OXIDES;

EID: 84940393352     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2015.07.011     Document Type: Article

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