Nonvolatile memory device using gold nanoparticles covalently bound to reduced graphene oxide

ACS Nano

Volumn 5, Issue 9, 2011, Pages 6826-6833

  Cui, Peng ^a   Seo, Sohyeon ^a   Lee, Junghyun ^a   Wang, Luyang ^a   Lee, Eunkyo ^a   Min, Misook ^a   Lee, Hyoyoung ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

gold nanoparticle; nanotechnology; nonvolatile memory; reduced graphene oxide; self assembledmonolayer

Indexed keywords

BIFUNCTIONAL; CHARGING EFFECT; COVALENTLY BOUND; GOLD ELECTRODES; GOLD NANOPARTICLE; GOLD NANOPARTICLES; HIGH STABILITY; LARGE CURRENT; MEMORY DEVICE; MOLECULAR BRIDGES; MOLECULAR LINKERS; NON-VOLATILE MEMORIES; NONLINEAR HYSTERESIS; NONVOLATILE MEMORY DEVICES; ON/OFF RATIO; READ-CYCLE; REDUCED GRAPHENE OXIDE; RETENTION TIME; SELF-ASSEMBLY TECHNIQUE; TETRAFLUOROBORATES; THIOL GROUPS; VERTICAL STRUCTURES; XPS ANALYSIS;

FUNCTIONAL GROUPS; GOLD; GRAPHENE; NANOPARTICLES; NONVOLATILE STORAGE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 80053336031     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn2021875     Document Type: Article

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