First-principles study of n-type tin/fluorine co-doped beta-gallium oxides

Journal of Semiconductors

Volumn 36, Issue 8, 2015, Pages

  Zhao, Yinnü ^a   Yan, Jinliang ^a  

^a LUDONG UNIVERSITY   (China)

Author keywords

electric properties; electronic structure; optical properties; semiconductor doping

Indexed keywords

DEFECTS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; LITHIUM COMPOUNDS; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; TIN OXIDES;

DEFECT FORMATION ENERGIES; EFFECTIVE ELECTRONS; ELECTRON NUMBER; FIRST PRINCIPLES; FIRST-PRINCIPLES STUDY; GALLIUM OXIDES; N-TYPE SEMICONDUCTORS; RICH CONDITIONS;

TIN;

EID: 84940041138     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/36/8/082004     Document Type: Article

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