A comparison of electronic structure and optical properties between N-doped β-Ga 2O 3 and NZn co-doped β-Ga 2O 3

Physica B: Condensed Matter

Volumn 407, Issue 8, 2012, Pages 1227-1231

  Zhang, Liying ^a   Yan, Jinliang ^a   Zhang, Yijun ^a   Li, Ting ^a   Ding, Xingwei ^a  

^a LUDONG UNIVERSITY   (China)

Author keywords

Co doped Ga 2O 3; Electronic band structure; First principles; Optical properties; P type Ga 2O 3

Indexed keywords

ABSORPTION PEAKS; BLUE-SHIFTED; CO-DOPED; ELECTRONIC BAND STRUCTURE; ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES; FIRST-PRINCIPLES; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; IMPURITY ABSORPTION; IMPURITY LEVEL; N-DOPED; P-TYPE; P-TYPE CONDUCTIVITY; RED-SHIFTED;

CALCULATIONS; ELECTRONIC STRUCTURE; OPTICAL PROPERTIES;

GALLIUM;

EID: 84862790913     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2012.01.107     Document Type: Article

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