Theoretical study on the stability and electronic property of Ag2SnO3

Solid State Sciences

Volumn 11, Issue 1, 2009, Pages 259-264

  Feng, J ^a   Xiao, B ^b   Chen, J C ^a   Zhou, C T ^b  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

Ab initio calculation; DFT; Electric contact materials; Layer structure; Mechanical properties

Indexed keywords

ATOMIC PHYSICS; ATOMS; CRYSTAL ATOMIC STRUCTURE; CRYSTALLOGRAPHY; DENSITY FUNCTIONAL THEORY; ELECTRIC CONNECTORS; ELECTRIC CONTACTS; ELECTRIC SWITCHGEAR; ELECTRONIC PROPERTIES; MATERIALS PROPERTIES; MECHANICAL PROPERTIES; PROBABILITY DENSITY FUNCTION; SILVER; SOLIDS; TIN;

AB INITIO CALCULATION; AG ATOMS; BAND GAPS; BULK CRYSTALS; C -AXIS; COHESIVE ENERGIES; DFT; ELECTRIC CONTACT MATERIALS; HEXAGONAL CELLS; LAYER STRUCTURE; ORBITAL ENERGIES; SEMI-CONDUCTORS; SHEAR MODULUS;

STRUCTURAL PROPERTIES;

EID: 57849123028     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2008.04.015     Document Type: Article

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