Direct tunneling effective mass of electrons determined by intrinsic charge-up process

Solid-State Electronics

Volumn 51, Issue 5, 2007, Pages 650-654

  Konig D ^a   Rennau, M ^a   Henker, M ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Direct tunneling; Electron effective mass; SiO2

Indexed keywords

BIAS CURRENTS; CAPACITANCE MEASUREMENT; CONVERGENCE OF NUMERICAL METHODS; CURRENT DENSITY; KINETIC ENERGY; SILICA; THERMAL ENERGY;

CAPACITANCE- OLTAGE (CV) MEASUREMENTS; DIRECT TUNNELING; ELECTRON EFFECTIVE MASS; TUNNELING CURRENT DENSITIES (TCD);

ELECTRON TUNNELING;

EID: 34248584373     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.03.009     Document Type: Article

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