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Applied Physics Letters

Volumn 107, Issue 7, 2015, Pages

Early stages of growth of Si nanowires by metal assisted chemical etching: A scaling study

(3) Pal, Arindam a Ghosh, Ramesh b Giri, P K b

a DEPARTMENT OF MATERIALS SCIENCE (India)

b INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI (India)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ETCHING; NANOWIRES;

GROWTH MECHANISMS; INSTABILITY MODEL; INTERFACE WIDTHS; KINETIC ROUGHENING; LATERAL CORRELATION LENGTH; METAL-ASSISTED CHEMICAL ETCHING; SI NANOWIRES (NWS); UNIVERSALITY CLASS;

SILICON;

EID: 84939634671 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4928714 Document Type: Article

Times cited : (18)

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