Quantitative analysis of hydrogen in amorphous silicon using Raman scattering spectroscopy

Journal of Raman Spectroscopy

Volumn 44, Issue 12, 2013, Pages 1760-1764

  Volodin, V A ^a   Koshelev, D I ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

Author keywords

amorphous hydrogenated silicon; hydrogen concentration; Si H bonds

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; HYDROGEN BONDS; HYDROGENATION; METALLIC FILMS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON COMPOUNDS;

A-SI:H; HYDROGEN CONCENTRATION; HYDROGENATED AMORPHOUS SILICON (A-SI:H) FILMS; IN-SITU CONTROL; INFRARED AND RAMAN SPECTROSCOPY; INFRARED SPECTRAL REGIONS; RAMAN SCATTERING CROSS SECTIONS; RAMAN SCATTERING SPECTROSCOPY; SI-H BONDS; SI-SI BONDS;

HYDROGEN;

EID: 84890553693     PISSN: 03770486     EISSN: 10974555     Source Type: Journal    
DOI: 10.1002/jrs.4408     Document Type: Article

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