Polarization sensitive silicon photodiodes using nanostructured metallic grids

Applied Physics Letters

Volumn 94, Issue 19, 2009, Pages

  Guillaume M ^a   Dunbar, L A ^a   Santschi, Ch ^b   Grenet, E ^a   Eckert, R ^a   Martin, O J F ^b   Stanley, R P ^a  

^a CSEM   (Switzerland)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS PHOTODIODES; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; EXTINCTION RATIOS; GLASS SUBSTRATES; HIGH TRANSMISSION; METALLIC GRID; MODAL EXPANSION METHOD; NANO-STRUCTURED; POLARIZATION SENSITIVE; SILICON PHOTODIODE; SINGLE APERTURE; TRANSMISSION PROPERTY; WIRE GRID; WIRE GRID POLARIZERS;

HETEROJUNCTION BIPOLAR TRANSISTORS; LIGHT EXTINCTION; OPTICAL INSTRUMENTS; PHOTODIODES;

WIRE;

EID: 67049087963     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3133862     Document Type: Article

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