Towards high-performance two-dimensional black phosphorus optoelectronic devices: The role of metal contacts

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2015-February, Issue February, 2015, Pages 5.2.1-5.2.4

  Deng, Yexin ^a   Conrad, Nathan J ^a   Luo, Zhe ^a   Liu, Han ^a   Xu, Xianfan ^a   Ye, Peide D ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; PHOSPHORUS; PHOTODETECTORS; PHOTONS; SCHOTTKY BARRIER DIODES; WORK FUNCTION;

AMBIPOLAR CHARACTERISTICS; HOLE CURRENT; METAL CONTACTS; METAL-SEMICONDUCTOR CONTACTS; P-TYPE; PHOTORESPONSIVITY; SCHOTTKY BARRIERS;

METALS;

EID: 84938218472     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2014.7046987     Document Type: Conference Paper

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