Electrically engineered band gap in two-dimensional GE, SN, and PB: A first-principles and tight-binding approach

Journal of Physical Chemistry C

Volumn 119, Issue 21, 2015, Pages 11896-11902

  Kaloni, Thaneshwor P ^a   Modarresi, Mohsen ^b   Tahir, Muhammad ^c   Roknabadi, Mahmood Rezaee ^b   Schreckenbach, Georg ^a   Freund, Michael S ^a  

^a UNIVERSITY OF MANITOBA   (Canada)

^b FERDOWSI UNIVERSITY OF MASHHAD   (Iran)

^c Gina Cody School of Engineering and Computer Science   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BINS; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; ENERGY GAP; GERMANIUM; LEAD; QUANTUM CHEMISTRY; SEMICONDUCTOR QUANTUM DOTS;

ELECTRONIC BAND STRUCTURE; EXTERNAL ELECTRIC FIELD; FIRST-PRINCIPLES CALCULATION; SEMI-INFINITE ELECTRODE; SPIN-ORBIT COUPLINGS; TIGHT-BINDING APPROACHES; TIGHT-BINDING CALCULATIONS; TWO DIMENSIONAL (2 D);

CALCULATIONS;

EID: 84930627317     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp512993y     Document Type: Article

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