Mapping polarization induced surface band bending on the Rashba semiconductor BiTeI

Nature Communications

Volumn 5, Issue , 2014, Pages

  Butler, Christopher John ^a   Yang, Hung Hsiang ^a   Hong, Jhen Yong ^a   Hsu, Shih Hao ^a   Sankar, Raman ^a,b   Lu, Chun I ^a   Lu, Hsin Yu ^a   Yang, Kui Hon Ou ^a   Shiu, Hung Wei ^c   Chen, Chia Hao ^c   Kaun, Chao Cheng ^d,e   Shu, Guo Jiun ^a   Chou, Fang Cheng ^a,c,f   Lin, Minn Tsong ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^d RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

^e NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^f National Science Council   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

POLARIZATION; SPECTROSCOPY;

ARTICLE; CONDUCTANCE; DENSITY FUNCTIONAL THEORY; MICROSCOPY; POLARIZATION; ROENTGEN SPECTROSCOPY; SCANNING TUNNELLING SPECTROSCOPY; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 84902185501     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms5066     Document Type: Article

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