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Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

Electrical field induced direct-to-indirect bandgap transition in ZnO nanowires

(4) Li, S a Li, J L a Jiang, Q b Yang, G W a

a SUN YAT SEN UNIVERSITY (China)

b Jilin University (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BANDGAP TRANSITION; COMPOUND SEMICONDUCTORS; ELECTRICAL FIELD; ENERGY BAND STRUCTURE; EXCITON-BINDING ENERGY; NANO-DEVICES; OPTOELECTRONIC NANODEVICES; POTENTIAL APPLICATIONS; SIZE AND SHAPE; WIDE BAND GAP; ZNO NANOWIRES;

BINDING ENERGY; BOND LENGTH; CHARGE TRANSFER; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; ION EXCHANGE; MICROELECTRONICS; NANOSTRUCTURED MATERIALS; NANOWIRES; ZINC; ZINC OXIDE;

ELECTRIC WIRE;

EID: 77955797793 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3462407 Document Type: Article

Times cited : (16)

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