Theoretical prediction of carrier mobility in few-layer BC2N

Journal of Physical Chemistry Letters

Volumn 5, Issue 23, 2014, Pages 4073-4077

  Si, M S ^a   Xie, Jiafeng ^a   Zhang, Z Y ^a   Yang, D Z ^a   Xue, D S ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

device application; direct bandgap semiconductor; few layer BC2N; first principles; high carrier mobility

Indexed keywords

CALCULATIONS; ENERGY GAP; HALL MOBILITY;

BAND-GAP SEMICONDUCTORS; DEVICE APPLICATION; FEW-LAYER BC2N; FIRST PRINCIPLES; HIGH CARRIER MOBILITY;

HOLE MOBILITY;

EID: 84915796820     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz502006z     Document Type: Article

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