Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers

Applied Physics Letters

Volumn 105, Issue 7, 2014, Pages

  Baek, Seung Heon Chris ^a   Seo, Yu Jin ^a   Oh, Joong Gun ^a   Albert Park, Min Gyu ^a   Bong, Jae Hoon ^a   Yoon, Seong Jun ^a   Seo, Minsu ^b   Park, Seung Young ^b   Park, Byong Guk ^a   Lee, Seok Hee ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE; SEMICONDUCTOR METAL BOUNDARIES;

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; FERMI LEVEL PINNING; GRAPHENE LAYERS; METAL-INDUCED GAP STATE; MULTIPLE LAYERS; SCHOTTKY BARRIER HEIGHTS; SPIN INJECTION; TUNNEL BARRIER;

GERMANIUM;

EID: 84929430299     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4893668     Document Type: Article

References (20)

1. A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangulou, Appl. Phys. Lett. 89, 252110 (2006). 10.1063/1.2410241 (Pubitemid 46035146)
2. T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Lett. 91, 123123 (2007). 10.1063/1.2789701 (Pubitemid 47461955)
3. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984). 10.1103/PhysRevLett.52.465
4. S. G. Louie and M. L. Cohen, Phys. Rev. B 13, 2461 (1976). 10.1103/PhysRevB.13.2461
5. R. T. Tung, Phys. Rev. B 64, 205310 (2001). 10.1103/PhysRevB.64.205310
6. W. E. Spicer, I. Lindau, P. Skeath, C. Y. Su, and P. Chye, Phys. Rev. Lett. 44, 420 (1980). 10.1103/PhysRevLett.44.420
7. Y. Zhou, M. Ogawa, X. Han, and K. L. Wang, Appl. Phys. Lett. 93, 202105 (2008). 10.1063/1.3028343
8. D. Lee, S. Raghunathan, R. J. Wilson, D. E. Nikonov, K. Saraswat, and S. X. Wang, Appl. Phys. Lett. 96, 052514 (2010). 10.1063/1.3285163
9. T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Exp. 1, 051406 (2008). 10.1143/APEX.1.051406
10. Y. Zhou, M. Ogawa, M. Bao, W. Han, R. K. Kawakami, and K. L. Wang, Appl. Phys. Lett. 94, 242104 (2009). 10.1063/1.3157128
11. A. K. Geim and K. S. Novoselov, Nature Mater. 6, 183-191 (2007). 10.1038/nmat1849 (Pubitemid 46353764)
12. O. M. J. van't Erve, A. L. Friedman, E. Cobas, C. H. Li, J. T. Robinson, and B. T. Jonker, Nature Nanotechnol. 7, 737-742 (2012). 10.1038/nnano.2012.161
13. A. C. Ferrari, Solid State Commun. 143, 47-57 (2007). 10.1016/j.ssc.2007.03.052 (Pubitemid 46874496)
14. J. J. Lee, Y. Shin, J. Choi, H. Kim, S. Hyun, S. Choi, B. J. Cho, and S. Lee, Phys. Status Solidi RRL 6, 439-441 (2012). 10.1002/pssr.201206315
15. X. Li, Y. Zhu, W. Cai, B. Borysiak, B. Han, D. Chem, R. D. Piner, L. Colombo, and R. S. Ruoff, Nano Lett. 9 (12), 4359-4363 (2009). 10.1021/nl902623y
16. Y. Zhou, W. Han, Y. Wang, F. Xiu, J. Zou, R. K. Kawakami, and K. L. Wang, Appl. Phys. Lett. 96, 102103 (2010). 10.1063/1.3357423
17. K. Jeon, B. Min, H. Lee, I. Shin, C. Park, and S. Shin, Appl. Phys. Lett. 97, 022105 (2010). 10.1063/1.3454276
18. D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley, New Jersey, 2006).
19. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York 1981), pp. 270-286.
20. B. Min, K. Motohashi, C. Lodder, and R. Janse, Nature Mater. 5, 817-822 (2006). 10.1038/nmat1736 (Pubitemid 44570865)