Reduction of charge trapping in HfO 2 film on a Ge substrate by trimethylaluminum pretreatment

Physica Status Solidi - Rapid Research Letters

Volumn 6, Issue 11, 2012, Pages 439-441

  Lee, Jae Jin ^a   Shin, Yunsang ^a   Choi, Juyun ^b   Kim, Hyoungsub ^b   Hyun, Sangjin ^c   Choi, Siyoung ^c   Cho, Byung Jin ^a   Lee, Seok Hee ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

Charge trapping; Germanium; HfO 2; Native oxide; Trimethylaluminum

Indexed keywords

ALUMINUM OXIDES; CONSTANT CURRENT STRESS; DEVICE RELIABILITY; GATE DIELECTRIC STACKS; GE DIFFUSION; GE SUBSTRATES; HFO 2; IN-SITU METHODS; INTERFACIAL LAYER; NATIVE OXIDES; PRE-TREATMENT; TRIMETHYLALUMINUM;

CHARGE TRAPPING; GATE DIELECTRICS; GERMANIUM; OXIDES;

HAFNIUM OXIDES;

EID: 84869131078     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201206315     Document Type: Article

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