Facile fabrication of a ultraviolet tunable MoS2/ p -Si junction diode

Applied Physics Letters

Volumn 106, Issue 19, 2015, Pages

  Serrano, William ^a   Pinto, Nicholas J ^a   Naylor, Carl H ^b   Kybert, Nicholas J ^b   Johnson, A T Charlie ^b  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

^b UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIODES; ELECTRIC FIELD EFFECTS; FIELD EFFECT TRANSISTORS; IRRADIATION; LAYERED SEMICONDUCTORS; SILICON WAFERS; SINGLE CRYSTALS;

CIRCUIT COMPONENTS; ELECTRON TRAPPING; FACILE FABRICATION; JUNCTION DIODE; ON STATE CURRENT; TURN-ON VOLTAGES; ULTRAVIOLET LIGHTS; UV IRRADIATION;

MOLYBDENUM COMPOUNDS;

EID: 84929377843     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4921238     Document Type: Article

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