Arrayed van der waals vertical heterostructures based on 2d gase grown by molecular beam epitaxy

Nano Letters

Volumn 15, Issue 5, 2015, Pages 3571-3577

  Yuan, Xiang ^a   Tang, Lei ^a   Liu, Shanshan ^a   Wang, Peng ^b   Chen, Zhigang ^c   Zhang, Cheng ^a   Liu, Yanwen ^a   Wang, Weiyi ^a   Zou, Yichao ^c   Liu, Cong ^b   Guo, Nan ^b   Zou, Jin ^c   Zhou, Peng ^a   Hu, Weida ^b   Xiu, Faxian ^a  

^a FUDAN UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

2D materials; GaSe; molecular beam epitaxy; p n junctions; photodiodes; van der Waals heterostructure

Indexed keywords

HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTOELECTRONIC DEVICES; PHOTODIODES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; VAN DER WAALS FORCES;

ATOMICALLY SHARP INTERFACE; EXTERNAL QUANTUM EFFICIENCY; GASE; P-N JUNCTION; PHOTO DETECTOR ARRAY; RECTIFYING CHARACTERISTICS; TWO DIMENSIONAL (2 D); VAN DER WAALS;

EPITAXIAL GROWTH;

EID: 84929177835     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b01058     Document Type: Article

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