Highly oriented star-like patterns observed on GaSe epilayers grown on Si(111)

Thin Solid Films

Volumn 515, Issue 4, 2006, Pages 1470-1474

  Jurca, H F ^a   Mazzaro, I ^a   Schreiner, W H ^a   Mosca, D H ^a   Eddrief, M ^b   Etgens, V H ^b  

^a FEDERAL UNIVERSITY OF PARANÁ   (Brazil)

^b INSTITUT DES NANOSCIENCES DE PARIS   (France)

Author keywords

Atomic force microscopy; Gallium selenide; Nucleation and growth; Stacking faults

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ETCHING; SILICON; STACKING FAULTS;

CHEMICAL ETCHING; EPITAXIAL DOMAINS; GALLIUM SELENIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33750832615     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.04.017     Document Type: Article

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