Controlled vapor phase growth of single crystalline, two-dimensional gase crystals with high photoresponse

Scientific Reports

Volumn 4, Issue , 2014, Pages

  Li, Xufan ^a   Lin, Ming Wei ^a   Puretzky, Alexander A ^a   Idrobo, Juan C ^a   Ma, Cheng ^a   Chi, Miaofang ^a   Yoon, Mina ^a   Rouleau, Christopher M ^a   Kravchenko, Ivan I ^a   Geohegan, David B ^a   Xiao, Kai ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84903631697     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep05497     Document Type: Article

References (51)

1. Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl. Acad. Sci. U.S.A. 102, 10451-10453 (2005 (Pubitemid 41061574)
2. Geim, A. K. & Novoselov, K. S. The rise of graphene. Nat. Mater. 6, 183-191 (2007
3. Xu, M. S., Liang, T., Shi, M. M. & Chen, H. Z. Graphene-like two-dimensional materials. Chem. Rev. 113, 3766-3798 (2013
4. Bulter, S. Z. et al. Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 7, 2898-2926 (2013
5. Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666-669 (2004 (Pubitemid 39440910)
6. Schwierz, F. Graphene transistors. Nat. Nanotechnol. 5, 487-496 (2010
7. Novoselov, K. S. et al. A roadmap for graphene. Nature 490, 192-200 (2012
8. Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263-275 (2013
9. Coleman, J. N. et al. Two-dimensional nanosheets produced by liquid exfoliation of layered materials. Science 331, 568-571 (2011
10. Song, L. et al. Large scale growth and characterization of atomic hexagonal boron nitride layers. Nano Lett. 10, 3209-3215 (2010
11. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147-150 (2011
12. Lee, Y.-H. et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 24, 2320-2325 (2012
13. van der Zande, A. M. et al. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat. Mater. 12, 554-561 (2013
14. Najmaei, S. et al. Vapour-phase growth and grain boundary structure of molybdenum disulphide atomic layers. Nat. Mater. 12, 754-759 (2013
15. Lee, Y.-H. et al. Synthesis and transfer of single-layer transition metal disulfides on diverse surface. Nano Lett. 13, 1852-1857 (2013
16. Zhang, Y. et al. Controlled growth of high-quality monolayer WS2 layers on sapphire and imaging its grain boundary. ACS Nano 7, 8963-8971 (2013
17. Jones, A. M. et al. Optical generation of excitonic valley coherence in monolayer WSe2. Nat. Nanotechnol. 8, 634-638 (2013
18. Fang, H. et al. High-performance single layered WSe2 p-FETs with chemically doped contacts. Nano Lett. 12, 3788-3792 (2012
19. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010
20. Zeng, H. L., Dai, J. F., Yao, W., Xiao, D. & Cui, X. D. Valley polarization in MoS2 monolayers by optical pumping. Nat. Nanotechnol. 7, 490-493 (2012
21. Hu, P. A. et al.Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates. Nano Lett. 13, 1649-1654 (2013
22. Late, D. J. et al. GaS and GaSe ultrathin layer transistors. Adv. Mater. 24, 3549-3554 (2012
23. Hu, P. A., Wen, Z. Z., Wang, L. F., Tan, P. H. & Xiao, K. Synthesis of few-layer GaSe nanosheets for high performance photodetectors. ACS Nano 6, 5988-5994 (2012
24. Lei, S. D. et al. Synthesis and photoresponse of large GaSe atomic layers. Nano Lett. 13, 2777-2781 (2013
25. Mudd, G. W. et al. Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement. Adv. Mater. 25, 5714-5718 (2013
26. Ghalouci, L. et al. First principle investigation into hexagonal and cubic structures of gallium selenide. Comput. Mater. Sci. 67, 73-82 (2013
27. Le Toullec, R., Balkanski, M., Besson, J. M. & Kuhn, A. Optical absorption edge of a new GaSe polytype. Phys. Lett. A 55, 245-246 (1975
28. Capozzi, V. & Montagna, M. Opctial spectroscopy of extrinsic recombinations in gallium selenide. Phys. Rev. B 40, 3182-3190 (1989
29. Kuhn, A., Chevy, A. & Chevalier, R. Crystal structure and interatomic distances in GaSe. Phys. Stat. Sol. (a) 31, 469-475 (1975
30. Plucinski, L. et al. Electronic band structure of GaSe(0001): Angle-resolved photoemission and ab initio theory. Phys. Rev. B 68, 125304 (2003
31. Augelli, V.,Manfredotti, C.,Murri, R. & Vasanelli, L. Hall-mobility anisotropy in GaSe. Phys. Rev. B 17, 3221-3226 (1978
32. Belenkii, G. L., Godzhaev, M. O., Salaev, E. Y. & Aliev, E. T. High-temperature electron-hole liquid in layered InSe, GaSe and GaS crystals. Sov. Phys. JETP 64, 1117-1123 (1986
33. Fan, Y., Bauer, M., Kador, L., Allakhverdiev, K. R. & Salaev, E. Y. Photoluminescence frequency up-conversion in GaSe single crystals as studied by confocal microscopy. J. Appl. Phys. 91, 1081-1086 (2002
34. Leontie, L., Evtodiev, I., Nedeff, V., Stamate, M. & Caraman, M. Photoelectric properties of Bi2O3/GaSe heterojunctions. Appl. Phys. Lett. 94, 071903 (2009
35. Shi, W., Ding, Y. J., Fernelius, N. & Vodopyanov, K. Efficient, tunable, and coherent 0.18-5.27-THz source based on GaSe crystal. Opt. Lett. 27, 1454 (2002
36. Allakhverdiev, K. R., Yetis, M.Ö .,Ö zbek, S., Baykara, T. K.&Salaev, E. Y. Effective nonlinear GaSe crystal. Optical properties and applications. Laser Phys. 19, 1092-1104 (2009
37. Rybkovskiy, D. V. et al. Size-induced effects in gallium selenide electric structure: The influence of interlayer interaction. Phys. Rev. B 84, 085314 (2011
38. Ma, Y.D., Dai, Y.,Guo, M., Yu, L.&Huang, B. B. Tunable electronic and dielectric behavior of GaS and GaSe monolayers. Phys. Chem. Chem. Phys. 15, 7098-7105 (2013
39. Zólyomi, V., Drummond, N. D. & Falko, V. I. Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides. Phys. Rev. B 87, 195403 (2013
40. Zhuang, H. L. & Hennig, R. G. Single-layer group-III monochalcogenides photocatalysts for water splitting. Chem. Mater. 25, 3232-3238 (2013
41. Li, X. S. et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324, 1312-1314 (2009
42. Li, C., Huang, L., Snigdha, G. P., Yu, Y. F. & Cao, L. Y. Role of boundary layer diffusion in vapor deposition growth of chalcogenide nanosheets: The case of GeS. ACS Nano 6, 8868-8877 (2012
43. Rumaner, L. E., Gray, J. L.&Ohuchi, F. S. Nucleation and growth of GaSe on GaAs by van der Waal epitaxy. J. Cryst. Growth 177, 17-27 (1997 (Pubitemid 127368927)
44. Ludviksson, A., Rumaner, L. E., Rogers Jr, J. W. & Ohuchi, F. S. Vacuum sublimation of GaSe: a molecular source for deposition of GaSe. J. Cryst. Growth 151, 114-120 (1995
45. Eaglesham, D. J. & Cerullo, M. Dislocation-free Stranski-Krastanow growth of Ge on Si(100). Phys. Rev. Lett. 64, 1943-1946 (1990
46. Allakhverdiev, K. et al. Lattice vibrations of pure and doped GaSe. Mater. Res. Bull. 41, 751-763 (2006 (Pubitemid 43344502)
47. Late, D. J., Liu, B., Matte, H. S. S. R., Rao, C. N. R. & Dravid, V. P. Rapid characterization of ultrathin layers of chalcogenides on SiO2/Si substrates. Adv. Funct. Mater. 22, 1894-1905 (2012
48. Blum, V. et al. Ab initio molecular simulations with numeric atom-centered orbitals. Comput. Phys. Comm. 180, 2175-2196 (2009
49. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865-3868 (1996 (Pubitemid 126631804)
50. Nagell, S., Baldereschi, A. & Maschke, K. Tight-binding study of the electronic states in GaSe polytypes. J. Phys. C: Solid State Phys. 12, 1625-1639 (1979
51. Lei, S. D. et al. Evolution of the electronic band structures and efficient photodetection in atomic layers of InSe. ACS Nano DOI: 10.1021/nn405529r.